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| LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V V CBO EBO LMBT2222AWT1G 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 419-02, STYLE 3 SOT-323 /SC - 70 Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RJA TJ , Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING LMBT2222AWT1G = 1P ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE EB V (BR)CEO V (BR)CBO V (BR)EBO 40 75 6.0 -- -- -- -- -- 20 10 Vdc Vdc Vdc nAdc nAdc I BL I CEX 1. Pulse Test: Pulse Width<300 s, Duty Cycle<2.0%. 1/3 LESHAN RADIO COMPANY, LTD. LMBT2222AWT1G ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 50 75 100 40 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS (1) DC Current Gain (1) (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage(1) (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) -- -- -- -- -- Vdc 0.3 1.0 Vdc 0.6 -- 1.2 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz) Output Capacitance (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Noise Figure (V CE= 10 Vdc, I C = 100 Adc, R S= 1.0 k, f = 1.0 kHz) fT C obo C ibo h ie h re h fe h oe NF 300 -- -- 0.25 -- 75 25 -- -- 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k X 10 -- mhos dB -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0 Vdc, V BE= - 0.5 Vdc I C = 150 mAdc, I B1 = 15 mAdc) (V CC = 30 Vdc, I C = 150 mAdc I B1 = I B2 = 15 mAdc) td tr ts tf -- -- -- -- 10 25 225 60 ns ns 1. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. Ordering Information Device LMBT2222AWT1G LMBT2222AWT3G Marking 1P 1P Shipping 3000/Tape&Reel 10000/Tape&Reel 2/3. LESHAN RADIO COMPANY, LTD. LMBT2222AWT1G SC-70 (SOT-323) D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 A1 GENERIC MARKING DIAGRAM SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 XX M XXM 1 = Specific Device Code = Date Code = Pb-Free Package G 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. mm inches 3/3 |
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